Influence of Electrochemical Etching on Electroluminescence from n-Type 4H-and 6H-SiC

被引：4
|
作者：
van Dorp, D. H. [1 ]
den Otter, J. H. [1 ]
Hijnen, N. [1 ]
Bergmeijer, M. [1 ]
Kelly, J. J. [1 ]
机构：
[1] Univ Utrecht, Debye Inst NanoMat Sci, NL-3584 CC Utrecht, Netherlands
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 06期
关键词：
electrochemistry; electroluminescence; electrolytes; etching; photoluminescence; porous semiconductors; silicon compounds; wide band gap semiconductors; SIC ELECTROLYTE INTERFACE; SILICON-CARBIDE; GALLIUM NITRIDE; LUMINESCENCE; PHOTOLUMINESCENCE; GAP;
D O I：
10.1149/1.3115404
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.
引用
收藏
页码：D49 / D52
页数：4
相关论文
共 50 条
  • [1] Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC
    Iwata, H
    Itoh, KM
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 729 - 732
  • [2] Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC
    Iwata, H
    Itoh, KM
    Pensl, G
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 1956 - 1961
  • [3] Electrochemical etching of n-type 6H-SiC without UV illumination
    Chang, WH
    Schellin, B
    Obermeier, E
    Huang, YC
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2006, 15 (03) : 548 - 552
  • [4] A theoretical study of electron drift mobility anisotropy in n-type 4H-and 6H-SiC
    Velmre, E
    Udal, A
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 725 - 728
  • [5] Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions
    Kato, M
    Ichimura, M
    Arai, E
    Ramasamy, P
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 665 - 668
  • [6] New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures
    Olafsson, HÖ
    Sveinbjörnsson, EÖ
    Rudenko, TE
    Kilchytska, VI
    Tyagulski, IP
    Osiyuk, IN
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1001 - 1004
  • [7] On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
    Weingärtner, R
    Wellmann, PJ
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 645 - 648
  • [8] Interface state densities near the conduction band edge in n-type 4H-and 6H-SiC
    Chung, GY
    Tin, CC
    Won, JH
    Williams, JR
    McDonald, K
    Weller, RA
    Pantelides, ST
    Feldman, LC
    2000 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOL 5, 2000, : 409 - 413
  • [9] 4H-and 6H-SiC UV photodetectors
    Ostlund, Ludwig
    Wang, Qin
    Esteve, Romain
    Almqvist, Susanne
    Rihtnesberg, David
    Reshanov, Sergey
    Zhang, Andy Z. Z.
    Lim, Jang-Kwon
    Bakowski, Mietek
    Schoner, Adolf
    Kaplan, Wlodek
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1680 - 1682
  • [10] Electrochemical etching of n-type 15R-SiC and 6H-SiC without UV illumination
    Wang, Guanghong
    Shi, Chengying
    Cao, Xuewei
    Wang, Hui
    Feng, Min
    Hao, Jianmin
    Wang, Yufang
    SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) : 409 - 411
12345