Influence of Electrochemical Etching on Electroluminescence from n-Type 4H-and 6H-SiC

被引：4
|
作者：
van Dorp, D. H. [1 ]
den Otter, J. H. [1 ]
Hijnen, N. [1 ]
Bergmeijer, M. [1 ]
Kelly, J. J. [1 ]
机构：
[1] Univ Utrecht, Debye Inst NanoMat Sci, NL-3584 CC Utrecht, Netherlands
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 06期
关键词：
electrochemistry; electroluminescence; electrolytes; etching; photoluminescence; porous semiconductors; silicon compounds; wide band gap semiconductors; SIC ELECTROLYTE INTERFACE; SILICON-CARBIDE; GALLIUM NITRIDE; LUMINESCENCE; PHOTOLUMINESCENCE; GAP;
D O I：
10.1149/1.3115404
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.
引用
收藏
页码：D49 / D52
页数：4
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