Mid Infrared Optical Properties of Ge/Si Quantum Dots with Different Doping Level

被引：0
|
作者：
Sofronov, A. N. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
Shalygin, V. A. [1 ]
Panevin, V. Yu [1 ]
Vinnichenko, M. Ya [1 ]
Tonkikh, A. A. [2 ]
Danilov, S. N. [3 ]
机构：
[1] St Petersburg State Polytech Univ, Polytech Skaya Str 29, St Petersburg, Russia
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Univ Regensburg, Regensburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
Quantum dots; photoinduced absorption;
D O I：
10.1063/1.4848475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.
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收藏
页码：441 / +
页数：2
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