Mid Infrared Optical Properties of Ge/Si Quantum Dots with Different Doping Level

被引：0
|
作者：
Sofronov, A. N. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
Shalygin, V. A. [1 ]
Panevin, V. Yu [1 ]
Vinnichenko, M. Ya [1 ]
Tonkikh, A. A. [2 ]
Danilov, S. N. [3 ]
机构：
[1] St Petersburg State Polytech Univ, Polytech Skaya Str 29, St Petersburg, Russia
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Univ Regensburg, Regensburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
Quantum dots; photoinduced absorption;
D O I：
10.1063/1.4848475
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.
引用
收藏
页码：441 / +
页数：2
相关论文
共 50 条
  • [31] Terahertz Optical Transmission of Charged Ge/Si Quantum Dots
    Balagula, Roman M.
    Sofronov, Anton N.
    Firsov, Dmitry A.
    Vorobjev, Leonid E.
    Tonkikh, Alexander A.
    Sarkisyan, Hayk A.
    Hayrapetyan, David B.
    Kazaryan, Eduard M.
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [32] Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
    Vorobjev, L. E.
    Firsov, D. A.
    Shalygin, V. A.
    Panevin, V. Yu.
    Sofronov, A. N.
    Yakimov, A. I.
    Dvurechenskii, A. V.
    Tonkikh, A. A.
    Werner, P.
    SEMICONDUCTORS, 2012, 46 (12) : 1529 - 1533
  • [33] Optical phonons in Ge quantum dots obtained on Si(111)
    Talochkin, AB
    Teys, SA
    JETP LETTERS, 2002, 75 (06) : 264 - 267
  • [34] Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
    L. E. Vorobjev
    D. A. Firsov
    V. A. Shalygin
    V. Yu. Panevin
    A. N. Sofronov
    A. I. Yakimov
    A. V. Dvurechenskii
    A. A. Tonkikh
    P. Werner
    Semiconductors, 2012, 46 : 1529 - 1533
  • [35] Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties
    Seo, Dong-Bum
    Hwang, Je-hwan
    Oh, Boram
    Kim, Jun Oh
    Lee, Sang Jun
    Kim, Eui-Tae
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2019, 29 (09): : 542 - 546
  • [36] Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
    A. N. Sofronov
    R. M. Balagula
    D. A. Firsov
    L. E. Vorobjev
    A. A. Tonkikh
    H. A. Sarkisyan
    D. B. Hayrapetyan
    L. S. Petrosyan
    E. M. Kazaryan
    Semiconductors, 2018, 52 : 59 - 63
  • [37] Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
    Sofronov, A. N.
    Balagula, R. M.
    Firsov, D. A.
    Vorobjev, L. E.
    Tonkikh, A. A.
    Sarkisyan, H. A.
    Hayrapetyan, D. B.
    Petrosyan, L. S.
    Kazaryan, E. M.
    SEMICONDUCTORS, 2018, 52 (01) : 59 - 63
  • [38] Si/Ge self-assembled quantum dots for infrared applications
    Cusack, MA
    Briddon, PR
    North, SM
    Kitchin, MR
    Jaros, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (11) : L81 - L84
  • [39] Doping of InP Quantum Dots and Its Optical Properties
    Yang Suo-Long
    Wang Xiao-Fang
    Jiang Chun-Li
    Zhao Ya-Wen
    Zeng Rong-Guang
    Wang Huai-Sheng
    Lai Xin-Chun
    JOURNAL OF INORGANIC MATERIALS, 2016, 31 (10) : 1051 - 1057
  • [40] Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors
    Andrew Yakimov
    Victor Kirienko
    Vyacheslav Timofeev
    Aleksei Bloshkin
    Anatolii Dvurechenskii
    Nanoscale Research Letters, 9
12345