Mid Infrared Optical Properties of Ge/Si Quantum Dots with Different Doping Level

被引：0

作者：

Sofronov, A. N. ^{[1
]}

Firsov, D. A. ^{[1
]}

Vorobjev, L. E. ^{[1
]}

Shalygin, V. A. ^{[1
]}

Panevin, V. Yu ^{[1
]}

Vinnichenko, M. Ya ^{[1
]}

Tonkikh, A. A. ^{[2
]}

Danilov, S. N. ^{[3
]}

机构：

[1] St Petersburg State Polytech Univ, Polytech Skaya Str 29, St Petersburg, Russia

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] Univ Regensburg, Regensburg, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Quantum dots; photoinduced absorption;

D O I：

10.1063/1.4848475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

引用

页码：441 / +

页数：2

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