Pressure transducer of the on the basis of reactive properties of transistor structure with negative resistance

被引:18
|
作者
Osadchuk, Alexander V. [1 ]
Osadchuk, Iaroslav A. [1 ]
Smolarz, Andrzej [2 ]
Kussambayeva, Nazym [3 ]
机构
[1] Vinnitsa Natl Tech Univ Vinnitsa, Vinnytsia, Ukraine
[2] Lublin Univ Technol, Inst Elect & Informat Technol, PL-20618 Lublin, Poland
[3] Kazakh Acad Transport & Commun M Tynyshpayev, Alma Ata 050012, Kazakhstan
关键词
pressure transducer; negative resistance; reactive properties;
D O I
10.1117/12.2229211
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector pressure sensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental research have shown, that sensitivity of the transducer makes 1,55-1,10kHz/kPa.
引用
收藏
页数:6
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