Pressure transducer of the on the basis of reactive properties of transistor structure with negative resistance

被引：18

作者：

Osadchuk, Alexander V. ^{[1
]}

Osadchuk, Iaroslav A. ^{[1
]}

Smolarz, Andrzej ^{[2
]}

Kussambayeva, Nazym ^{[3
]}

机构：

[1] Vinnitsa Natl Tech Univ Vinnitsa, Vinnytsia, Ukraine

[2] Lublin Univ Technol, Inst Elect & Informat Technol, PL-20618 Lublin, Poland

[3] Kazakh Acad Transport & Commun M Tynyshpayev, Alma Ata 050012, Kazakhstan

来源：

OPTICAL FIBERS AND THEIR APPLICATIONS 2015 | 2015年 / 9816卷

关键词：

pressure transducer; negative resistance; reactive properties;

D O I：

10.1117/12.2229211

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector pressure sensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental research have shown, that sensitivity of the transducer makes 1,55-1,10kHz/kPa.

引用

页数：6

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