Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

被引:3
|
作者
Wang, Junbao [1 ]
Mi, Wenbo [2 ]
Wang, Laisen [1 ]
Zhang, Qinfu [1 ]
Peng, Dongliang [1 ]
机构
[1] Xiamen Univ, Fujian Key Lab Adv Mat, Coll Mat, Dept Mat Sci & Engn, Xiamen 361005, Peoples R China
[2] Tianjin Univ, Inst Adv Mat Phys, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSPORT PROPERTIES; GRANULAR METALS; CONDUCTIVITY; MAGNETORESISTANCE; FERROMAGNETICS; MULTILAYERS;
D O I
10.1039/c4cp01493f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (t(a) = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (R-s) at t(a) = 1200 nm reaches its maximum of 2.4 x 10(-8) Omega cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivity (rho(A)(XY)) first increases and then decreases with the increase of temperature accompanied by a sign change from positive to negative. Analysis of the results revealed that rho(A)(XY) decreases with increasing longitudinal resistivity (rho(XX)) on a double-logarithmic scale and obeys a new scaling relation of log(rho(A/)(XY)rho(XX)) = a(0) + b(0) log rho(XX).
引用
收藏
页码:16623 / 16628
页数:6
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