A 20mΩcm2 600 V-class superjunction MOSFET

被引：0
|
作者：
Saito, W [1 ]
Omura, I [1 ]
Aida, S [1 ]
Koduki, S [1 ]
Izumisawa, M [1 ]
Yoshioka, H [1 ]
Ogura, T [1 ]
机构：
[1] Toshiba Co Ltd, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源：
ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20similar tomOmegacm(2) among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185similar toA/cm(2).
引用
收藏
页码：459 / 462
页数：4
相关论文
共 50 条
  • [1] Analysis of the electrical characteristics of 600 V-Class electron irradiated fast recovery Superjunction VDMOS
    Zhu, Jing
    Zhang, Long
    Sun, Weifeng
    Qian, Qinsong
    Ma, Wenli
    Yang, Zhuo
    Lu, Shengli
    SOLID-STATE ELECTRONICS, 2013, 80 : 38 - 44
  • [2] 24mΩcm2680V silicon superjunction MOSFET
    Onishi, Y
    Iwamoto, S
    Sato, T
    Nagaoka, T
    Ueno, K
    Fujihira, T
    PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2002, : 241 - 244
  • [3] 600V semi-superjunction MOSFET
    Saito, W
    Omura, I
    Aida, S
    Koduki, S
    Izumisawa, M
    Ogura, T
    ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 45 - 48
  • [4] 20mΩcm2 660V super junction MOSFETs fabricated by deep trench etching and epitaxial growth
    Takahashi, K.
    Kuribayashi, H.
    Kawashima, T.
    Wakimoto, S.
    Mochizuki, K.
    Nakazawa, H.
    PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 297 - +
  • [5] Vertical Charge Imbalance Effect on 600 V-class Trench-Filling Superjunction Power MOSFETs
    Tamaki, T.
    Nakazawa, Y.
    Kanai, H.
    Abiko, Y.
    Ikegami, Y.
    Ishikawa, M.
    Wakimoto, E.
    Yasuda, T.
    Eguchi, S.
    2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, : 308 - 311
  • [6] Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET
    Xu, Hang
    Yang, Yafen
    Tan, Jingjing
    Chen, Lin
    Ji, Li
    Zhu, Hao
    Sun, Qingqing
    Zhang, David Wei
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (07) : 3743 - 3747
  • [7] On-State and Switching Performance Comparison of A 600 V-class Hybrid SiC JFET and Si Superjunction MOSFETs
    Tamaki, Tomohiro
    Ishida, Shinya
    Tomizawa, Yoshikazu
    Nakamura, Hiroyuki
    Shirai, Yasuhiro
    Akiyama, Satoru
    Shimizu, Haruka
    Yokoyama, Natsuki
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 950 - +
  • [8] High breakdown voltage (> 1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process
    Saito, W
    Omura, I
    Aida, S
    Koduki, S
    Izumisawa, M
    Yoshioka, H
    Ogura, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2317 - 2322
  • [9] 1200 V 14 mΩ SiC MOSFET with Low Specific On-Resistance of 3.3 mΩ cm2
    Zhang, Yuan-Lan
    Shi, Wen-Hua
    Lei, Guang-Yin
    Zhang, Qingchun Jon
    2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 43 - 46
  • [10] 4.3 mΩcm2, 1100 V4H-SiC implantation and epitaxial MOSFET
    Harada, Shinsuke
    Kato, Makoto
    Okamoto, Mitsuo
    Yatsuo, Tsutomu
    Fukuda, Kenji
    Arai, Kazuo
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1281 - 1284
12345