Development of CdTe pixel detectors for Compton cameras

被引:15
|
作者
Watanabe, Shin
Tanaka, Takaaki
Oonuki, Kousuke
Mitani, Takefumi
Takeda, Shin'ichiro
Kishishita, Tetsuichi
Nakazawa, Kazuhiro
Takahashi, Tadayuki
Kuroda, Yoshikatsu
Onishi, Mitsunobu
机构
[1] JAXA, Inst Space & Astronaut Sci, Kanagawa 2298510, Japan
[2] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
[3] Mitsubishi Heavy Ind Co Ltd, Nagoya Guidance & Prop Syst Works, Aichi 4858561, Japan
关键词
gamma-ray detector; Compton telescope; silicon strip detector; cadmium telluride (CdTe);
D O I
10.1016/j.nima.2006.05.164
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report our development of CdTe pixel detectors for Si/CdTe semiconductor Compton cameras. We have constructed a prototype of a Si/CdTe Compton camera, consisting of six layered double-sided silicon strip detectors and three CdTe pixel detectors. By using this prototype, we have demonstrated the concept of the Si/CdTe Compton cameras. We have successfully obtained Compton reconstructed images for 80-662 keV gamma-rays. The achieved angular resolution is about 4 degrees for 511 keV gamma-rays. The energy resolution is 14 keV (FWHM) at 511 keV. In order to improve the performance of the Compton camera, we have evaluated all CdTe pixel detectors we have constructed. We found that the I-V curve is helpful to select good detectors. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:150 / 153
页数:4
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