Development of a Si/CdTe semiconductor Compton telescope

被引：16

作者：

Tanaka, T ^{[1
]}

Mitani, T ^{[1
]}

Watanabe, S ^{[1
]}

Nakazawa, K ^{[1
]}

Oonuki, K ^{[1
]}

Sato, G ^{[1
]}

Takahashi, T ^{[1
]}

Tamura, KI ^{[1
]}

Tajima, H ^{[1
]}

Nakamura, H ^{[1
]}

Nomachi, M ^{[1
]}

Nakamoto, T ^{[1
]}

Fukazawa, Y ^{[1
]}

机构：

[1] Inst Space & Astronaut Sci, JAXA, Sagamihara, Kanagawa 2298510, Japan

来源：

HIGH-ENERGY DETECTORS IN ASTRONOMY | 2004年 / 5501卷

关键词：

gamma-ray; Compton telescope; semicondictor detector; CdTe; silicon strip detector;

D O I：

10.1117/12.552600

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9degrees and 5.7degrees at 122 keV and 356 keV, respectively.

引用

页码：229 / 240

页数：12

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