Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers

被引：6

作者：

Chu, Yow-Lin ^{[1
]}

Lin, Yow-Jon

Ho, Cheng-Hsiang

Chen, Wei-Li

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Gifu 500, Taiwan

[2] Natl Changhua Univ Educ, Dept Elect Engn, Gifu 500, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 9A期

关键词：

gaN; InGaN; ohmic contact; two-dimensional hole gas; specific contact resistance;

D O I：

10.1143/JJAP.45.6884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker p-InGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 x 10(-5) Omega cm(2).

引用

页码：6884 / 6887

页数：4

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