Comparison of Ni/Au and Pd/Au Ohmic Contacts to p-GaN

被引：0
|
作者：
Sasada, M. [1 ]
Sasakura, A. [1 ]
Takashima, N. [1 ]
Tokuda, H. [1 ]
Kuzuhara, M. [1 ]
机构：
[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan
来源：
2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年
关键词：
GaN; MOS; ohmic contact; anneal; Ni; Pd; TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a comparative study of Ni/Au and Pd/Au ohmic contacts to p-GaN. Effects of annealing temperature and acceptor concentration on ohmic characteristics were investigated. It was found that both ohmic contacts exhibited a contact resistivity of less than 4x10(-3) Omega cm(2) after 600 degrees C annealing. Moreover, fairly good ohmic behaviors were observed for Pd/Au even without annealing.
引用
收藏
页码：96 / 97
页数：2
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