Direct wafer bonding and layer transfer for ferroelectric thin film integration

被引：0
|
作者：
Alexe, M [1 ]
Senz, S [1 ]
Pignolet, A [1 ]
Hesse, D [1 ]
Gösele, U [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
INTEGRATED FERROELECTRICS | 1999年 / 27卷 / 1-4期
关键词：
layer transfer; direct wafer bonding; metal-ferroelectric-silicon structures; interface trap density;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding (DWB) and layer transfer is proposed. Metal-ferroelectric-silicon (MFS) structures were fabricated by both layer transfer process and direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. Interface trap measurements show a large difference for MFS structures fabricated by bonding or by direct deposition, respectively. The trap density values were ranging from 2x10(12) cm(-2)eV(-1) for SBT/Si directly deposited to 4x10(11) cm(-2)eV(-1) for SBT/Si bonded interfaces.
引用
收藏
页码：1249 / 1255
页数：7
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