Direct wafer bonding and layer transfer for ferroelectric thin film integration

被引：0

作者：

Alexe, M ^{[1
]}

Senz, S ^{[1
]}

Pignolet, A ^{[1
]}

Hesse, D ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

INTEGRATED FERROELECTRICS | 1999年 / 27卷 / 1-4期

关键词：

layer transfer; direct wafer bonding; metal-ferroelectric-silicon structures; interface trap density;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding (DWB) and layer transfer is proposed. Metal-ferroelectric-silicon (MFS) structures were fabricated by both layer transfer process and direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. Interface trap measurements show a large difference for MFS structures fabricated by bonding or by direct deposition, respectively. The trap density values were ranging from 2x10(12) cm(-2)eV(-1) for SBT/Si directly deposited to 4x10(11) cm(-2)eV(-1) for SBT/Si bonded interfaces.

引用

页码：1249 / 1255

页数：7

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