Direct wafer bonding and layer transfer for ferroelectric thin film integration

被引：0
|
作者：
Alexe, M [1 ]
Senz, S [1 ]
Pignolet, A [1 ]
Hesse, D [1 ]
Gösele, U [1 ]
机构：
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
INTEGRATED FERROELECTRICS | 1999年 / 27卷 / 1-4期
关键词：
layer transfer; direct wafer bonding; metal-ferroelectric-silicon structures; interface trap density;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding (DWB) and layer transfer is proposed. Metal-ferroelectric-silicon (MFS) structures were fabricated by both layer transfer process and direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. Interface trap measurements show a large difference for MFS structures fabricated by bonding or by direct deposition, respectively. The trap density values were ranging from 2x10(12) cm(-2)eV(-1) for SBT/Si directly deposited to 4x10(11) cm(-2)eV(-1) for SBT/Si bonded interfaces.
引用
收藏
页码：1249 / 1255
页数：7
相关论文
共 50 条
  • [1] Wafer bonding and layer transfer for thin film ferroelectrics
    Ruglovsky, JL
    Park, YB
    Ryan, CA
    Atwater, HA
    FERROELECTRIC THIN FILMS XI, 2003, 748 : 331 - 336
  • [2] Direct wafer bonding and layer transfer: An innovative way for the integration of ferroelectric oxides into silicon technology
    Alexe, M
    Senz, S
    Pignolet, A
    Scott, JF
    Hesse, D
    Gosele, U
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 517 - 522
  • [3] Direct wafer bonding and layer transfer -: a new approach to integration of ferroelectric oxides into silicon technology
    Alexe, M
    Senz, S
    Pignolet, A
    Hesse, D
    Gösele, U
    FERROELECTRICS, 1999, 231 (1-4) : 757 - 766
  • [4] Direct wafer bonding and layer transfer - a new approach to integration of ferroelectric oxides into silicon technology
    Max Planck Inst. Microstructure P., D-06120 Halle/Saale, Germany
    Ferroelectrics, 1 -4 pt 3 (169-178):
  • [5] Porous silicon films for thin film layer transfer applications and wafer bonding
    Joshi, M. B.
    Hu, S. J.
    Goorsky, M. S.
    SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 195 - 206
  • [6] Integration of Indium Phosphide Thin Film Structures on Silicon Substrates by Direct Wafer Bonding
    Arokiaraj, J.
    Vicknesh, S.
    Ramam, A.
    INTERNATIONAL MEMS CONFERENCE 2006, 2006, 34 : 404 - 409
  • [7] Low temperature wafer bonding for thin silicon film transfer
    Goustouridis, D
    Minoglou, K
    Kolliopoulou, S
    Chatzandroulis, S
    Morfouli, P
    Normand, P
    Tsoukalas, D
    SENSORS AND ACTUATORS A-PHYSICAL, 2004, 110 (1-3) : 401 - 406
  • [8] Low-temperature Adhesive Wafer Bonding for Film Layer Transfer
    Rodrigues, Augusto
    Andrianov, Nikolai
    Syed, Munir Azeem
    Petschnigg, Madeleine
    Nguyen, Tai
    Dao, Thang Duy
    Roshanghias, Ali
    2024 IEEE 10TH ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, ESTC 2024, 2024,
  • [9] Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process
    Alexe, M
    Senz, ST
    Pignolet, A
    Hesse, D
    Gösele, U
    FERROELECTRICS, 1999, 225 (1-4) : 881 - 888
  • [10] Single-crystalline ferroelectric thin films by ion implantation and direct wafer bonding
    Szafraniak, I
    Radu, I
    Scholz, R
    Alexe, M
    Gösele, U
    INTEGRATED FERROELECTRICS, 2003, 55 : 983 - 990
12345