Effects of Sheet Resistance on Selective Emitter Solar Cells by Laser Direct Doping

被引：0
|
作者：
Lin, Yu-Hsuan [1 ]
Chen, Sung-Yu [1 ]
Du, Chen-Hsun [1 ]
Yu, Sin-Han [2 ]
Adurodija, Ojo Frederick [3 ]
Chang, Hung-Yi [3 ]
机构：
[1] ITRI, Green Energy & Environm Res Lab GEL, 195 Chung Hsing Rd, Hsinchu 31040, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, 145 Xingda Rd, Taichung 40227, Taiwan
[3] Big Sun Energy Technol Inc, 458-9 Sinsing Rd, Hsinchu 30353, Taiwan
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
laser doping (LD); selective emitter (SE); silicon solar cells;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This article investigates the effects of sheet resistance on a selective emitter (SE) solar cell fabricated using a simple laser doping process (LD). In order to demonstrate the influence of lightly doped emitter we divided cells for three groups for POC13 diffusion with sheet resistance of 100 Omega/sq (SE-1), 120 Omega/sq (SE-2) and 140 Omega/sq (SE-3). After laser doping, the sheet resistance is similar to 60 Omega/sq for silver electrode contact. The optimal cell with sheet resistance values of 60/120 Omega/sq showed the best efficiency (eta) of 20.11 %, open circuit of 650 mV.
引用
收藏
页码：2464 / 2466
页数：3
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