Effects of Sheet Resistance on Selective Emitter Solar Cells by Laser Direct Doping

被引：0

作者：

Lin, Yu-Hsuan ^{[1
]}

Chen, Sung-Yu ^{[1
]}

Du, Chen-Hsun ^{[1
]}

Yu, Sin-Han ^{[2
]}

Adurodija, Ojo Frederick ^{[3
]}

Chang, Hung-Yi ^{[3
]}

机构：

[1] ITRI, Green Energy & Environm Res Lab GEL, 195 Chung Hsing Rd, Hsinchu 31040, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, 145 Xingda Rd, Taichung 40227, Taiwan

[3] Big Sun Energy Technol Inc, 458-9 Sinsing Rd, Hsinchu 30353, Taiwan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

laser doping (LD); selective emitter (SE); silicon solar cells;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This article investigates the effects of sheet resistance on a selective emitter (SE) solar cell fabricated using a simple laser doping process (LD). In order to demonstrate the influence of lightly doped emitter we divided cells for three groups for POC13 diffusion with sheet resistance of 100 Omega/sq (SE-1), 120 Omega/sq (SE-2) and 140 Omega/sq (SE-3). After laser doping, the sheet resistance is similar to 60 Omega/sq for silver electrode contact. The optimal cell with sheet resistance values of 60/120 Omega/sq showed the best efficiency (eta) of 20.11 %, open circuit of 650 mV.

引用

页码：2464 / 2466

页数：3

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