Characteristics of microwave power GaNHEMTs on 4-inch Si wafers

被引：12

作者：

Manohar, S ^{[1
]}

Narayanan, A ^{[1
]}

Keerti, A ^{[1
]}

Pham, A ^{[1
]}

Brown, J ^{[1
]}

Borges, R ^{[1
]}

Linthicum, K ^{[1
]}

机构：

[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson Integrated Microsyst Grp, Clemson, SC 29634 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g. of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of our knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.

引用

页码：449 / 452

页数：4

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