Characteristics of microwave power GaNHEMTs on 4-inch Si wafers

被引：12
|
作者：
Manohar, S [1 ]
Narayanan, A [1 ]
Keerti, A [1 ]
Pham, A [1 ]
Brown, J [1 ]
Borges, R [1 ]
Linthicum, K [1 ]
机构：
[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson Integrated Microsyst Grp, Clemson, SC 29634 USA
来源：
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年
关键词：
D O I：
10.1109/MWSYM.2002.1011652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g. of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of our knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.
引用
收藏
页码：449 / 452
页数：4
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