Electrical Characterization of InGaAsN/GaAs Heterostructures

被引：0

作者：

Benko, P. ^{[1
]}

Kosa, A. ^{[1
]}

Drobny, J. ^{[1
]}

Sciana, B. ^{[2
]}

Dawidowski, W. ^{[2
]}

Radziewicz, D. ^{[2
]}

Tlaczala, M. ^{[2
]}

Kovac, J. ^{[1
]}

Stuchlikova, L. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia

[2] Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

来源：

2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study emphasises an electrical characterization of sixteen different InGaAsN/GaAs triple quantum well heterostructures, prepared with various nitrogen and indium concentrations (nitrogen content varied in range of 0 % to 1.2 % and indium concentration from 0 % up to 16 %) by capacitance methods. Parameters of many deep energy levels were gathered and assessed by Deep Level Transient Fourier Spectroscopy measurements. Eight of these were with high probability caused by charge carrier thermal emissions from quantum wells. Authors focused their attention on conditions for prediction of the presence of the charge carrier emission from quantum wells and the one from structural defects in InGaAsN/GaAs structures with various nitrogen and indium concentrations.

引用

页码：113 / 116

页数：4

共 50 条

[21] The optical quality of InGaAsN/GaAs
Robinson, BJ
Yuan, LX
Thompson, DA
McMaster, SA
Streater, RW
OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 18 - 27
[22] Characterization of electrical properties of GaAs nanowires and planar heterostructures by Kelvin probe force microscopy
Matheson, Graham
Geelhaar, Lutz
Hellmann, Martin
Herranz, Jesus
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 255
[23] EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS/AL/GAAS HETEROSTRUCTURES
OH, JE
BHATTACHARYA, PK
SINGH, J
DOSPASSOS, W
CLARKE, R
MESTRES, N
MERLIN, R
CHANG, KH
GIBALA, R
SURFACE SCIENCE, 1990, 228 (1-3) : 16 - 19
[24] Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
Rybar, J.
Stuchlikova, L'
Petrus, M.
Harmatha, L.
Sciana, B.
Radziewicz, D.
Pucicki, D.
Tlaczala, M.
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 103 - 106
[25] STUDY OF ELECTRICAL ACTIVATION IN STRAINED INGAAS GAAS HETEROSTRUCTURES
UCHIDA, Y
MISHIMA, T
TANOUE, T
TAKAHAMA, M
TAKAHASHI, S
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 447 - 452
[26] Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
Lee, PP
Hwu, RJ
Sadwick, LP
Balasubramaniam, H
Kumar, BR
Alvis, R
Lareau, RT
Wood, MC
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 405 - 408
[27] Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
P. P. Lee
R. J. Hwu
L. P. Sadwick
H. Balasubramaniam
B. R. Kumar
R. Alvis
R. T. Lareau
M. C. Wood
Journal of Electronic Materials, 1998, 27 : 405 - 408
[28] EPITAXIAL-GROWTH AND CHARACTERIZATION OF NIGA/GAAS AND GAAS/NIGA/GAAS HETEROSTRUCTURES
DUREL, V
GUENAIS, B
BALLINI, Y
CAULET, J
CHOMETTE, A
DUPAS, G
ROPARS, G
MINIER, M
GUIVARCH, A
REGRENY, A
BADOZ, PA
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 129 - 134
[29] Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
Odnoblyudov, VA
Egorov, AY
Kryzhanovskaya, NV
Gladyshev, AG
Mamutin, VV
Tsatsul'nikov, AF
Ustinov, VM
TECHNICAL PHYSICS LETTERS, 2002, 28 (11) : 964 - 966
[30] Optical characterization of InGaAsN/GaAsN/GaAS quantum wells with InGaP cladding layers
Lu, CR
Liu, HL
Lee, JR
Wu, CH
Lin, HH
Sung, LW
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2005, 66 (11) : 2082 - 2085

← 1 2 3 4 5 →