Electrical Characterization of InGaAsN/GaAs Heterostructures

被引：0

作者：

Benko, P. ^{[1
]}

Kosa, A. ^{[1
]}

Drobny, J. ^{[1
]}

Sciana, B. ^{[2
]}

Dawidowski, W. ^{[2
]}

Radziewicz, D. ^{[2
]}

Tlaczala, M. ^{[2
]}

Kovac, J. ^{[1
]}

Stuchlikova, L. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia

[2] Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

来源：

2018 12TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study emphasises an electrical characterization of sixteen different InGaAsN/GaAs triple quantum well heterostructures, prepared with various nitrogen and indium concentrations (nitrogen content varied in range of 0 % to 1.2 % and indium concentration from 0 % up to 16 %) by capacitance methods. Parameters of many deep energy levels were gathered and assessed by Deep Level Transient Fourier Spectroscopy measurements. Eight of these were with high probability caused by charge carrier thermal emissions from quantum wells. Authors focused their attention on conditions for prediction of the presence of the charge carrier emission from quantum wells and the one from structural defects in InGaAsN/GaAs structures with various nitrogen and indium concentrations.

引用

页码：113 / 116

页数：4

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