K-band single balanced mixer with high P1dB compression using 0.18 μm CMOS process

被引：2
|
作者：
Kim, Sung-Hyun [1 ]
Yu, Han-Yeol [1 ]
Choi, Sung-Sun [1 ]
Kim, Yong-Hoon [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mech, Kwangju 500712, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2006年 / 48卷 / 10期
关键词：
0.18 mu m CMOS; single balanced mixer; capacitor; inductor;
D O I：
10.1002/mop.21864
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
K-band single balanced mixer based on Gilbert type using 0.18 mu m CMOS process is presented. For the circuit design, passive lumped elements such as a spiral inductor and a MIM capacitor are tested up 40 GHz. The designed mixer has a conversion gain of 2.3 dB and a PIdB of -3 dBm at 24 GHz. It dissipates the power of 30.6 mW with 1.8 V supply voltage and the overall size is 940 X 560 mu m(2). (C) 2006 Wiley Periodicals, Inc.
引用
收藏
页码：2134 / 2137
页数：4
相关论文
共 50 条
  • [41] Design of a K-Band Power Amplifier for High Gain, Output Power and Efficiency on 0.18-μm SiGe BiCMOS Process
    Kim, Kyoungwoon
    Cam Nguyen
    2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 594 - 596
  • [42] Design of a K-Band VCO Implementing T-Type LC Network in 0.18-μm CMOS Technology
    Jahan, Nusrat
    Pokharel, Ramesh K.
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (07): : 1039 - 1042
  • [43] A K-Band High-Gain LNA in 0.13-μm RF CMOS
    Cao, Zhiyuan
    He, Jin
    Peng, Yao
    Hou, Haomin
    Wang, Hao
    Chang, Sheng
    Huang, Qijun
    2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019), 2019,
  • [44] A 60 GHz Wideband High Output P1dB Up-conversion Image Rejection Mixer in 0.25 μM SiGe Technology
    Elkhouly, Mohamed
    Glisic, Srdjan
    Scheytt, Christoph
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 49 - 52
  • [45] A broadband LNA and mixer for digital video broadcasting applications using a 0.18-m CMOS process
    Qiang, Tian
    Kim, Eun Seong
    Wang, Cong
    Park, Min Chul
    Kim, Nam Young
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (09) : 2092 - 2099
  • [46] 2.5-7 GHz single balanced mixer with integrated Ruthroff-type balun in 0.18 μm CMOS technology
    Chiou, H. -K.
    Chung, H. -Y.
    ELECTRONICS LETTERS, 2013, 49 (07) : 474 - 475
  • [47] A K-Band Broadband Low Noise Amplifier With 18.8 dB Gain And-13 dBm IP1dB in 0.13-μm CMOS
    Li, Jinwei
    Sun, Bing
    Li, Dongze
    Xia, Qingzhen
    Huang, Jiawei
    Wu, Lei
    Chang, Hudong
    Jia, Rui
    Liu, Honggang
    IEICE ELECTRONICS EXPRESS, 2022, 19 (16):
  • [48] A K-Band High-Gain I,inear CMOS Mixer with Current-Bleeding Neutralization Technique
    Lin, Dong-Ru
    Kao, Kun-Yao
    Lin, Kun-You
    2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 267 - 269
  • [49] A K-band High Gain, Low Noise Figure LNA using 0.13 μm Logic CMOS Technology
    Dang, J.
    Sakalas, P.
    Noculak, A.
    Hinz, M.
    Meinerzhagen, B.
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 120 - 123
  • [50] A K-band down-conversion mixer with 1.4-GHz bandwidth in 0.13-μm CMOS technology
    Verma, A
    Gao, L
    O, KK
    Lin, JS
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (08) : 493 - 495
12345