K-band single balanced mixer with high P1dB compression using 0.18 μm CMOS process

被引：2
|
作者：
Kim, Sung-Hyun [1 ]
Yu, Han-Yeol [1 ]
Choi, Sung-Sun [1 ]
Kim, Yong-Hoon [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mech, Kwangju 500712, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2006年 / 48卷 / 10期
关键词：
0.18 mu m CMOS; single balanced mixer; capacitor; inductor;
D O I：
10.1002/mop.21864
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
K-band single balanced mixer based on Gilbert type using 0.18 mu m CMOS process is presented. For the circuit design, passive lumped elements such as a spiral inductor and a MIM capacitor are tested up 40 GHz. The designed mixer has a conversion gain of 2.3 dB and a PIdB of -3 dBm at 24 GHz. It dissipates the power of 30.6 mW with 1.8 V supply voltage and the overall size is 940 X 560 mu m(2). (C) 2006 Wiley Periodicals, Inc.
引用
收藏
页码：2134 / 2137
页数：4
相关论文
共 50 条
  • [31] Wideband on-chip K-band RF front-end for vehicular FMCW radar applications in 0.18 μm CMOS process
    Yu H.-Y.
    Choi S.-S.
    Kim Y.-H.
    Progress In Electromagnetics Research C, 2010, 17 : 145 - 162
  • [32] A K-BAND LOW-NOISE AMPLIFIER IN 0.18-μm CMOS TECHNOLOGY FOR SUB-1-V OPERATION
    Jin, Jun-De
    Hsu, Shawn S. H.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (09) : 2202 - 2204
  • [33] A K-band 16-way Combined High Power Amplifier in 0.18-um CMOS
    Hsieh, Cheng-Hung
    Tsai, Zuo-Min
    2016 IEEE 5TH GLOBAL CONFERENCE ON CONSUMER ELECTRONICS, 2016,
  • [34] Extremely high P1dB MMIC amplifiers for Ka-band applications
    Lai, R
    Grundbacher, R
    Barsky, M
    Oki, A
    Siddiqui, M
    Pitman, B
    Katz, R
    Tran, P
    Callejo, L
    Streit, D
    GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001, 2001, : 115 - 117
  • [35] Equivalent Circuit Design of Compacted K-band Bandpass Filters by Standard 0.18-μm CMOS Technology
    Lin, Shuiyang
    Sun, Xiaowei
    Li, Lingyun
    Wang, Wei
    Yang, Liwu
    2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 290 - +
  • [36] A K-band 24.1% PAE Wideband Unilateralized CMOS Power Amplifier Using Differential Transmission-Line Transformers in 0.18-μm CMOS
    Chen, Po-Hsun
    Chiou, Hwann-Kaeo
    Wang, Yuan-Chang
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (11) : 927 - 929
  • [37] A K-Band Phase-Locked Loop in 0.18 μm CMOS Technology for Vital Sign Detection Radar
    Cheng, Jen-Hao
    Wu, Ming-Hang
    Huang, Hsiang-Ting
    Wu, Yi-Ming
    Tsai, Jeng-Han
    Huang, Tian-Wei
    2014 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON RF AND WIRELESS TECHNOLOGIES FOR BIOMEDICAL AND HEALTHCARE APPLICATIONS (IMWS-BIO), 2014,
  • [38] A K-Band Low Phase Noise Transformer Coupled Colpitts VCO in 0.18-μm CMOS Technology
    Hsieh, Chi-Kai
    Kao, Kun-Yao
    Lin, Kun-You
    ASIA-PACIFIC MICROWAVE CONFERENCE 2011, 2011, : 1626 - 1629
  • [39] A K-Band VCO Employing High Active Q-factor Defected Ground Structure Resonator in 0.18μm CMOS Technology
    Jahan, Nusrat
    Chen Baichuan
    Pokharel, Ramesh K.
    Barakat, Adel
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [40] 2.5 V passive CMOS mixer with 20 dBm P1 dB compression
    De Backer, E.
    Bauwelinck, J.
    Melange, C.
    Matei, E.
    Ossieur, P.
    Qiu, X. Z.
    Vandewege, J.
    Horvath, S.
    ELECTRONICS LETTERS, 2008, 44 (18) : 1067 - U30
12345