8 b 10 MS/s differential SAR ADC in 28 nm CMOS for precise energy measurement

被引:2
|
作者
Kaczmarczyk, P. [1 ]
Kmon, P. [1 ]
机构
[1] AGH Univ Sci & Technol, Al Mickiewicza 30, PL-30059 Krakow, Poland
来源
JOURNAL OF INSTRUMENTATION | 2022年 / 17卷 / 03期
关键词
Analogue electronic circuits; Electronic detector readout concepts (solid-state); Front-end electronics for detector readout;
D O I
10.1088/1748-0221/17/03/C03027
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this article an 8-bit differential Successive Approximation Register (SAR) Analog to-Digital Converter (ADC), designed in the 28 nm CMOS process is presented. It is aimed at pixelated radiation imaging detectors. It allows to distinguish 256 levels of energy and is capable of converting 10 MS/s. The measured INL and DNL are +/- 0.5 LSB and +/- 0.3 LSB, respectively. Importantly, the proposed ADC's comparator offset voltage correction is realized in a time domain allowing to shift the transfer characteristics within the 12 LSB range with no conversion rate degradation. The core of the ADC occupies only 30 mu m x 60 mu m and the power consumption is 45 mu W.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] A 10 b 50 MS/s two-stage pipelined SAR ADC in 1 8 0 nm CMOS
    Shen Yi
    Liu Shubin
    Zhu Zhangming
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (06)
  • [2] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhangming Zhu
    Qiyu Wang
    Yu Xiao
    Xiaoli Song
    Yintang Yang
    Analog Integrated Circuits and Signal Processing, 2013, 76 : 129 - 137
  • [3] An 8-bit 208 MS/s SAR ADC in 65 nm CMOS
    Zhu, Zhangming
    Wang, Qiyu
    Xiao, Yu
    Song, Xiaoli
    Yang, Yintang
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 76 (01) : 129 - 137
  • [4] A 10 bit 90 MS/s SAR ADC in a 65 nm CMOS Technology
    Digel, Johannes
    Groezing, Markus
    Berroth, Manfred
    2016 IEEE 16TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2016, : 110 - 112
  • [5] A Background Calibrated 28GS/s 8b Interleaved SAR ADC in 28nm CMOS
    Le, M. Q.
    Gorecki, J.
    Riani, J.
    Pernillo, J.
    Tan, A.
    Gopalakrishnan, K.
    Helal, B.
    Khandelwal, P.
    Loi, C.
    Quek, I.
    Wong, P.
    Buchwald, A.
    2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2017,
  • [6] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, (06) : 140 - 144
  • [7] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, 37 (06) : 140 - 144
  • [8] A 400-MS/s 10-b 8 interleaved SAR ADC in 0.13 um CMOS
    Zhu, Xiaoge
    Zhou, Lei
    Wu, Danyu
    Wu, Jin
    Liu, Xinyu
    IEICE ELECTRONICS EXPRESS, 2017, 14 (05):
  • [9] A 10b 160-MS/s Domino-SAR ADC in 90nm CMOS
    Chung, Yung-Hui
    Yeh, Hsuan-Chih
    Chang, Che-Wei
    2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018, : 76 - 77
  • [10] A 12-b 4-MS/s SAR ADC With Configurable Redundancy in 28-nm CMOS Technology
    Haenzsche, Stefan
    Hoeppner, Sebastian
    Ellguth, Georg
    Schueffny, Rene
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61 (11) : 835 - 839