Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-Ir bottom spin valve

被引：0
|
作者：
Yoon, SY [1 ]
Lee, DH [1 ]
Lee, JY [1 ]
Kim, YS [1 ]
Yoon, DH [1 ]
Suh, SJ [1 ]
机构：
[1] Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Suwon 440746, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 44卷 / 05期
关键词：
specular spin valve; nano oxide layer; MR%; exchange bias field;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H-ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H-in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.
引用
收藏
页码：1075 / 1078
页数：4
相关论文
共 50 条
  • [41] Inter layer magnetic coupling in exchange bias and spin valve structures with Fe-Mn and Ir-Mn antiferromagnetic layers
    Kuncser, V.
    Keune, W.
    von Hoersten, U.
    Schinteie, G.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (06): : 1385 - 1393
  • [42] Magnetoresistance of antiferromagnetic Ir22Mn78-pinned spin filter specular spin valves
    Hwang, JY
    Kim, MY
    Rhee, JR
    Lee, SS
    Hwang, DG
    Yu, SC
    Lee, HB
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (08): : 1728 - 1731
  • [43] Effect of capping layer on the spin accumulation and magnetoresistance of a current-perpendicular-to-plane spin valve
    Kumar, S. Bala
    Tan, S. G.
    Jalil, M. B. A.
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
  • [44] Enhancement of spin-orbit torque by inserting CoOx layer into Co/Pt interface
    Hasegawa, K.
    Hibino, Y.
    Suzuki, M.
    Koyama, T.
    Chiba, D.
    PHYSICAL REVIEW B, 2018, 98 (02)
  • [45] Characterization of a nano-oxide layer in a pseudo spin valve by complex magneto-impedance spectroscopy
    Chien, W. C.
    Peng, T. Y.
    Hsieh, L. C.
    Lo, C. K.
    Yao, Y. D.
    IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) : 2624 - 2626
  • [46] The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer
    Jang, SH
    Kang, T
    Kim, HJ
    Kim, KY
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) : 192 - 195
  • [47] Improved thermal stability of Mn-Ir-based magnetic tunnel junction with nano-oxide layer
    Yoon, SY
    Kim, YI
    Lee, DH
    Kim, YS
    Suh, SJ
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (08): : 1716 - 1719
  • [48] Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer
    Fowley, C.
    Chun, B. S.
    Wu, H. C.
    Abid, M.
    Cho, J. U.
    Noh, S. J.
    Kim, Y. K.
    Shvets, I. V.
    Coey, J. M. D.
    APPLIED PHYSICS LETTERS, 2009, 95 (22)
  • [49] Negative Magnetoresistance in Dual Spin Valve Structures With a Synthetic Antiferromagnetic Free Layer
    Fowley, C.
    Chun, B. S.
    Coey, J. M. D.
    IEEE TRANSACTIONS ON MAGNETICS, 2009, 45 (06) : 2403 - 2406
  • [50] Layer thickness effect on the magnetoresistance of a current-perpendicular-to-plane spin valve
    Tan, S. G.
    Jalil, M. B. A.
    Kumar, S. Bala
    Han, G. C.
    Zheng, Y. K.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
12345