Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-Ir bottom spin valve

被引：0
|
作者：
Yoon, SY [1 ]
Lee, DH [1 ]
Lee, JY [1 ]
Kim, YS [1 ]
Yoon, DH [1 ]
Suh, SJ [1 ]
机构：
[1] Sungkyunkwan Univ, Adv Mat & Proc Res Ctr IT, Suwon 440746, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 44卷 / 05期
关键词：
specular spin valve; nano oxide layer; MR%; exchange bias field;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H-ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H-in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.
引用
收藏
页码：1075 / 1078
页数：4
相关论文
共 50 条
  • [21] Enhancement of magnetoresistance with low interlayer coupling by insertion of a nano-oxide layer into a free magnetic layer
    Nam, Chunghee
    Lee, Ki-Su
    Cho, B.K.
    Journal of Applied Physics, 2005, 97 (10):
  • [22] Exchange bias and spin-valve giant magnetoresistance in multilayers with Mn-17 mol%Ir-2 mol%Pt antiferromagnetic layer
    Jeon, DM
    Kim, YS
    Na, SM
    Ro, JC
    Yoon, DH
    Suh, SJ
    MATERIALS TRANSACTIONS, 2002, 43 (05) : 893 - 896
  • [23] Exchange coupling and magnetoresistance in nano-oxide layer built-in specular spin valves
    Diao, ZT
    Huai, YM
    Chen, LF
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7104 - 7106
  • [24] Exchange coupling and magnetoresistance in nano-oxide layer built-in specular spin valves
    Diao, Z., 1600, American Institute of Physics Inc. (91):
  • [25] Magnetoresistance in magnetic multilayers with the nano-oxide layer
    Chen, SP
    Chang, CR
    Lai, CH
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 7699 - 7701
  • [26] Magnetoresistance in magnetic multilayers with the nano-oxide layer
    Chen, S.-P. (d89222002@ms89.ntu.edu.tw), 1600, American Institute of Physics Inc. (93):
  • [27] Effect of the nano-oxide layer as a Mn diffusion barrier in specular spin valves
    Jang, SH
    Kang, T
    Kim, HJ
    Kim, KY
    APPLIED PHYSICS LETTERS, 2002, 81 (01) : 105 - 107
  • [28] Exchange enhancement and thermal anneal in Mn76Ir24 bottom-pinned spin valves
    Li, HH
    Freitas, PP
    Wang, ZJ
    Sousa, JB
    Gogol, P
    Chapman, J
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6904 - 6906
  • [29] Antiferromagnet thickness dependence of top and bottom giant magnetoresistance spin valve multilayers
    Jeon, DM
    Kim, BG
    Lee, JP
    Lee, DH
    Suh, SJ
    METASTABLE, MECHANICALLY ALLOYED AND NANOCRYSTALLINE MATERIALS, 2003, : 691 - 696
  • [30] Influence of the nano-oxide layer position. on magnetoresistance ratio and magnetic properties in spin valves
    Suh, Jeong Dae
    Ross, C. A.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (12): : 4474 - 4477
12345