Explosive crystallization in eutectic materials of phase change optical memory

被引：0
|
作者：
Okuda, M [1 ]
Inaba, H [1 ]
Usuda, S [1 ]
机构：
[1] Okuda Tech Off, Osaka 5918032, Japan
来源：
ADVANCED DATA STORAGE MATERIALS AND CHARACTERIZATION TECHNIQUES | 2004年 / 803卷
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films are discussed. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From these analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the stoichiometric GeSbTe media. Also, the quantum effect on the melting, crystallization and solidification of phase change media has been discussed.
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页码：225 / 232
页数：8
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