Thermal dispersion and secondary crystallization of phase change memory cells

被引：5
|
作者：
Deng, Y. F. [1 ,2 ]
Li, Z. [1 ,2 ]
Peng, J. H. [1 ,2 ]
Liu, C. [1 ,2 ]
Miao, X. S. [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Engn, Wuhan 430074, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 23期
关键词：
AMORPHIZATION;
D O I：
10.1063/1.4831966
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The heat accumulation effect associated with heat dispersion process in phase change memory cell was analyzed. The pulse operating scheme was optimized. The pulse sequences with different intervals show distinct heat accumulation effect. A compact model with pulse sequence expansion was proposed, and the simulation result is close to the experiment data for a pulse sequence with interval 20 ns. The simulated R-V curves show that threshold voltage reduces with the decreasing pulse interval. The secondary crystallization and amorphization were used to explain the heat accumulation effect for high speed operation, cycling, and so on. (C) 2013 AIP Publishing LLC.
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页数：4
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