Modeling and simulation of single-electron Multi Tunnel Junction Memory

被引：0

作者：

Le Royer, C. ^{[1
]}

Le Carval, G. ^{[1
]}

Sanquer, M. ^{[1
]}

Fraboulet, D. ^{[1
]}

机构：

[1] CEA GRE, LETI DTS, CEA DRT, F-38054 Grenoble 9, France

来源：

ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY | 2002年

关键词：

modeling; simulation; nanocrystal memory; double tunnel junction; quantum confinement;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries...) on writing and retention characteristics of the MUM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).

引用

页码：205 / 208

页数：4

共 50 条

[31] Silicon single-electron memory structure
Stone, NJ
Ahmed, H
MICROELECTRONIC ENGINEERING, 1998, 42 : 511 - 514
[32] Single-electron logic and memory devices
Korotkov, AN
INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (05) : 511 - 547
[33] Single-electron parametron memory cell
Emiroglu, EG
Durrani, ZAK
Hasko, DG
Williams, DA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2806 - 2809
[34] Memory effects in single-electron nanostructures
Crupi, I
Lombardo, S
Gerardi, C
Ammendola, G
Vulpio, M
Rimini, E
Melanotte, M
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 669 - 673
[35] Simulation of the nanoelectronic single-electron transistor and the nanoelectronic C-NOT single-electron gate
Zardalidis, George T.
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 1303 - 1306
[36] Simulation of single-electron tunneling circuits
Gerousis, CP
Goodnick, SM
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (01): : 113 - 126
[37] Adaptive simulation for single-electron devices
Allec, Nicholas
Knobel, Robert
Shang, Li
2008 DESIGN, AUTOMATION AND TEST IN EUROPE, VOLS 1-3, 2008, : 900 - +
[38] The study of I-V characteristics of single-electron triple-barrier tunnel-junction
Liu, YX
Wang, YC
Du, SY
ACTA PHYSICA SINICA, 2004, 53 (08) : 2734 - 2740
[39] Ohmic property of a single-electron tunnel-junction system and its application to neural network synapses
Shin, M
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (10-11): : 1457 - 1464
[40] Asymmetric tunnel barrier in a Si single-electron transistor
Fujiwara, A
Takahashi, Y
Murase, K
MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 197 - 199

← 1 2 3 4 5 →