Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

被引：0

作者：

Park, JS

Lee, SY

Shin, HS

Dutton, RW

机构：

[1] Ewha W Univ, Dept Informat Elect Engn, Seodaemoon Gu, Seoul, South Korea

[2] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 20期

关键词：

D O I：

10.1049/el:20020797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a scaling length (lambda) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5lambda and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

引用

页码：1222 / 1223

页数：2

共 50 条

[41] Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications
Kalna, K
Yang, L
Asenov, A
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 169 - 172
[42] High-Performance pH Sensors Using Ion-Sensitive InGaAs-Channel MOSFETs at Sub-100 nm Technology Node
Suprovat Ghosh
Suchismita Tewari
Abhijit Biswas
Amlan Chakrabarti
Journal of Electronic Materials, 2021, 50 : 1292 - 1300
[43] High-Performance pH Sensors Using Ion-Sensitive InGaAs-Channel MOSFETs at Sub-100 nm Technology Node
Ghosh, Suprovat
Tewari, Suchismita
Biswas, Abhijit
Chakrabarti, Amlan
JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (03) : 1292 - 1300
[44] AN ANALYTICAL THRESHOLD VOLTAGE MODEL OF SHORT-CHANNEL MOSFETS WITH IMPLANTED CHANNELS
DASGUPTA, A
LAHIRI, SK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1177 - 1178
[45] Analytical Modeling of RDF Effects on the Threshold Voltage in Short-Channel Double-Gate MOSFETs
Graef, Michael
Hain, Franziska
Hosenfeld, Fabian
Horst, Fabian
Farokhnejad, Atieh
Iniguez, Benjamin
Kloes, Alexander
PROCEEDINGS OF THE 24TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS - MIXDES 2017, 2017, : 127 - 131
[46] ANALYTICAL MODELING OF OVERSHOOTING EFFECT IN SUB-100 nm CMOS INVERTERS
Bisdounis, Labros
JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2011, 20 (07) : 1303 - 1321
[47] Analysis and optimization of sub-100 nm NMOS with halo
Shenzhen Graduate School, Peking University, Shenzhen 518055, China
不详
Guti Dianzixue Yanjiu Yu Jinzhan, 2006, 4 (445-449):
[48] 1D ANALYTICAL TREATMENT OF HOT-ELECTRON EFFECTS IN SHORT-CHANNEL MOSFETS
MIURAUSCH, M
DORDA, G
PHYSICA B & C, 1985, 134 (1-3): : 77 - 81
[49] Short-channel vertical sidewall MOSFETs
Schulz, T
Rösner, W
Risch, L
Korbel, A
Langmann, U
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) : 1783 - 1788
[50] Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
Rim, K
Narasimha, S
Longstreet, M
Mocuta, A
Cai, J
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 43 - 46

← 1 2 3 4 5 →