Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

被引：0
|
作者：
Park, JS
Lee, SY
Shin, HS
Dutton, RW
机构：
[1] Ewha W Univ, Dept Informat Elect Engn, Seodaemoon Gu, Seoul, South Korea
[2] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 20期
关键词：
D O I：
10.1049/el:20020797
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a scaling length (lambda) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5lambda and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.
引用
收藏
页码：1222 / 1223
页数：2
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