We have developed an algorithm for the analysis of single-electron standards of de current. The algorithm is based on numerical solution of the master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refinement of the operational set of states. To illustrate the method we have analyzed several standards of de current. We have shown that the accuracy of the single-electron pump may be improved dramatically at lower frequencies and temperatures by replacing the traditional triangular drive wave forms with a special step-like drive. We have also shown that the M-junction turnstile does not achieve the accuracy of the 5-junction pump with the same values of capacitances and resistances even at M=8. However, a hybrid M-junction pump/turnstile system which is easier to control than the 5-junction pump, exhibits a comparable accuracy already at M=6. (C) 1996 American Institute of Physics.
机构:
Korea Res Inst Stand & Sci, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
Kim, Bum-Kyu
Yu, Byeong-Sung
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Korea Adv Instituteof Sci & Technol, Dept Phys, Daejeon 34141, South Korea
Korea Adv Inst Sci & Technol, Ctr Quantum Coherence Condensed Matter, Daejeon 34141, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
Yu, Byeong-Sung
Park, Suk-In
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Korea Inst Sci & Technol, Seoul 02792 Ac, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
Park, Suk-In
Song, Jindong
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Korea Inst Sci & Technol, Seoul 02792 Ac, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
Song, Jindong
Kim, Nam
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Korea Res Inst Stand & Sci, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
Kim, Nam
Bae, Myung-Ho
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Korea Res Inst Stand & Sci, Daejeon 34113, South Korea
Univ Sci & Technol, Dept Nano Sci, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Daejeon 34113, South Korea
机构:
NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, JapanNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Pashkin, Yu. A.
Li, T. F.
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, Japan
Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R ChinaNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, JapanNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Astafiev, O.
Knyazev, D. A.
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Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, RussiaNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Knyazev, D. A.
Hoehne, F.
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, Japan
Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Hoehne, F.
Im, H.
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, Japan
Dongguk Univ, Dept Semicond Sci, Seoul 100715, South KoreaNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Im, H.
Nakamura, Y.
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, JapanNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
Nakamura, Y.
Tsai, J. S.
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NEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan
RIKEN Adv Sci Inst, Tsukuba, Ibaraki 3058501, JapanNEC Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan