Modeling and Optimization of Multiground TSVs for Signals Shield in 3-D ICs

被引：37
|
作者：
Qu, Chenbing [1 ,2 ,3 ]
Ding, Ruixue [1 ,3 ,4 ]
Liu, Xiaoxian [1 ,5 ]
Zhu, Zhangming [1 ,4 ,6 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
[2] North Univ China, Taiyuan, Peoples R China
[3] Xidian Univ, Microelect & Solid State Elect, Xian 710071, Peoples R China
[4] Xidian Univ, Sch MicroElect, Xian, Peoples R China
[5] Shaanxi Univ Sci & Technol, Elect Sci & Technol, Shaanxi, Peoples R China
[6] Xidian Univ, Microelect, Xian, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2017年 / 59卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Coupling capacitance; crosstalk suppression; modeling; three-dimensional integrated circuits (3-D ICs); through-silicon via (TSV); THROUGH-SILICON-VIAS;
D O I：
10.1109/TEMC.2016.2608981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an effective loop impedance extraction method and a model of a signal through-silicon via (TSV) surrounded by multiground TSVs. According to this method, the effective coupling substrate capacitances of multiground TSVs with different numbers and placements are calculated. Based on the calculated values of the resistance-inductance-capacitance-conductance (RLCG) parameters, the equivalent circuit and a two-port network model are established. The S-parameters of the model are validated by the simulated and measured results. Then, the effect of different patterns of ground TSVs on the central signal and coupling capacitance are discussed. Note that the hexagon pattern proposed in this paper can save the occupied area prominently without damaging the signal integrity. © 2016 IEEE.
引用
收藏
页码：461 / 467
页数：7
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