Correlating reticle pinhole defects to wafer printability for the 90nm node lithography using advanced RET

For the 90nm-lithography node, understanding the impact of various reticle pinhole defects on wafer printability is essential to optimize wafer yield and to create the best quality reticle defect specification. In this study, a new programmed pinhole test reticle was designed by UMC, TCE and KLA-Tencor based on UMC's process requirements for its 193nm lithography. The reticle was manufactured and inspected on KLA-Tencor's high-resolution reticle inspection system in die to database mode by TCE. The reticle was then printed on a wafer by UMC to characterize the printability impact of programmed pinhole defects. The programmed pinhole test reticle, "193PTM", consists of two IC background patterns - poly gate and contact with programmed pinholes at various locations. The pinhole size ranges from 20nm to 75nm in 5nm increments on the wafer. By comparing the high-resolution pattern inspection results to the wafer print data, we have established the correlation and the appropriate mask specification based on wafer application guidelines.