Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method

6H-SiC single crystal ingots grown by using the sublimation physical vapor transport (PVT) technique were prepared on two-seed crystals, with opposite face polarities; then, SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the 2-inch SiC crystal grown in this study was about 0.3 mm/hr. n-type 2 '' SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The incorporation of nitrogen donors in the Sic crystals grown on the C-face seed crystal was shown to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal; finally a SiC crystal having only a C-face was obtained. X-ray rocking curves and reciprocal space mappings (RSM) definitely revealed a better crystal quality for the SiC crystal grown on the C-face seed crystal than for the SiC crystal grown on the Si-face.