SIC BOULE GROWTH BY SUBLIMATION VAPOR TRANSPORT

被引：87

作者：

BARRETT, DL ^{[1
]}

SEIDENSTICKER, RG ^{[1
]}

GAIDA, W ^{[1
]}

HOPKINS, RH ^{[1
]}

CHOYKE, WJ ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 109卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90152-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Silicon carbide is an attractive candidate for high power and high temperature electronics due to its inherent high thermal conductivity, large saturated drift velocity, high breakdown strength and large bandgap. A review of the material properties which influence semiconductor device characteristics is presented, and recent advances in crystal growth technology leading to the preparation of 25 mm and larger wafers for "silicon-like" device fabrication processes are reviewed. A sublimation vapor transport system is described and preliminary results on growth of 6H-SiC boules are presented.

引用

页码：17 / 23

页数：7

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