Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device

被引：11

作者：

Ariyawansa, G. ^{[1
]}

Jayaweera, P. V. V. ^{[1
]}

Perera, A. G. U. ^{[1
,2
]}

Matsik, S. G. ^{[2
]}

Buchanan, M. ^{[3
]}

Wasilewski, Z. R. ^{[3
]}

Liu, H. C. ^{[3
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] NDP Optron LLC, Mableton, GA 30126 USA

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

OPTICS LETTERS | 2009年 / 34卷 / 13期

基金：

美国国家科学基金会;

关键词：

WELL INFRARED PHOTODETECTOR; GAAS;

D O I：

10.1364/OL.34.002036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A GaAs/AlGa-As detector is demonstrated showing multiple detection capabilities. This detector exhibits a broad spectral response in the 200-870 nm (ultraviolet-visible) range for forward bias and in the 590-870 nm (visible) range for reverse bias. In the mid-IR region, two peaks at 5 and 8.9 mu m can be observed for low and high forward bias voltages, respectively. In addition, the peak at 8.9 mu m is sensitive to the polarization of the incoming radiation. (C) 2009 Optical Society of America

引用

页码：2036 / 2038

页数：3

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