Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device

被引：11
|
作者：
Ariyawansa, G. [1 ]
Jayaweera, P. V. V. [1 ]
Perera, A. G. U. [1 ,2 ]
Matsik, S. G. [2 ]
Buchanan, M. [3 ]
Wasilewski, Z. R. [3 ]
Liu, H. C. [3 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] NDP Optron LLC, Mableton, GA 30126 USA
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
OPTICS LETTERS | 2009年 / 34卷 / 13期
基金：
美国国家科学基金会;
关键词：
WELL INFRARED PHOTODETECTOR; GAAS;
D O I：
10.1364/OL.34.002036
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A GaAs/AlGa-As detector is demonstrated showing multiple detection capabilities. This detector exhibits a broad spectral response in the 200-870 nm (ultraviolet-visible) range for forward bias and in the 590-870 nm (visible) range for reverse bias. In the mid-IR region, two peaks at 5 and 8.9 mu m can be observed for low and high forward bias voltages, respectively. In addition, the peak at 8.9 mu m is sensitive to the polarization of the incoming radiation. (C) 2009 Optical Society of America
引用
收藏
页码：2036 / 2038
页数：3
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