Growth and characterization of bulk GaInSb crystals from non-stoichiometric melts

被引：0

作者：

Bliss, David ^{[1
]}

Becla, Piotr ^{[2
]}

机构：

[1] USAF, Res Lab, Hanscom AFB, MA 01731 USA

[2] Solid State Sci Corp, Nashua, NH 03049 USA

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

gallium antimonide; crystal growth; stoichiometry;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed the traveling heater method (THM) using a low melting point solvent to grow alloys of GaInSb at constant composition with low defect density. The melting point is reduced by using excess antimony or indium as a solvent, By growing the crystal at low temperature it is possible to avoid the high concentration of gallium antisite defects responsible for the dominant native acceptor concentration. With reduced acceptor concentration, a significant increase in the optical transmission from 2 to 20 gin was observed in crystals grown at low temperature. A series of crystal growth runs has demonstrated the use of off-stoichiometry melts as a means to control the electrical and optical properties of GaInSb alloy crystals.

引用

页码：414 / +

页数：2

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