Growth and characterization of bulk GaInSb crystals from non-stoichiometric melts

被引：0
|
作者：
Bliss, David [1 ]
Becla, Piotr [2 ]
机构：
[1] USAF, Res Lab, Hanscom AFB, MA 01731 USA
[2] Solid State Sci Corp, Nashua, NH 03049 USA
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
gallium antimonide; crystal growth; stoichiometry;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed the traveling heater method (THM) using a low melting point solvent to grow alloys of GaInSb at constant composition with low defect density. The melting point is reduced by using excess antimony or indium as a solvent, By growing the crystal at low temperature it is possible to avoid the high concentration of gallium antisite defects responsible for the dominant native acceptor concentration. With reduced acceptor concentration, a significant increase in the optical transmission from 2 to 20 gin was observed in crystals grown at low temperature. A series of crystal growth runs has demonstrated the use of off-stoichiometry melts as a means to control the electrical and optical properties of GaInSb alloy crystals.
引用
收藏
页码：414 / +
页数：2
相关论文
共 50 条
  • [31] The growth of non-stoichiometric apatites using the constant composition method
    Dhondt, CL
    Verbeeck, RMH
    DeMaeyer, EAP
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN MEDICINE, 1996, 7 (04) : 201 - 205
  • [32] Synthesis and characterization of non-stoichiometric cobalt nanoferrites for multifunctional applications
    Ebtesam E. Ateia
    Abdulalah AL-Hamzi
    B. Hussein
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 20642 - 20655
  • [33] Transition from epitaxial to columnar growth of non-stoichiometric GaAs deposited at low temperatures
    Luysberg, M
    Specht, P
    Sohn, H
    Weber, ER
    ELECTRON MICROSCOPY 1998, VOL 3, 1998, : 455 - 456
  • [34] Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method
    Jin Min
    Ma Yupeng
    Wei Tianran
    Lin Siqi
    Bai Xudong
    Shi Xun
    Liu Xuechao
    JOURNAL OF INORGANIC MATERIALS, 2024, 39 (05) : 554 - 560
  • [35] Resonance scattering and RBS from non-stoichiometric oxides
    De, U
    Verma, KC
    Karmakar, P
    Sarkar, A
    Dey, S
    Verma, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 212 : 505 - 509
  • [36] Atomically precise interfaces from non-stoichiometric deposition
    Nie, Y. F.
    Zhu, Y.
    Lee, C. -H.
    Kourkoutis, L. F.
    Mundy, J. A.
    Junquera, J.
    Ghosez, Ph.
    Baek, D. J.
    Sung, S.
    Xi, X. X.
    Shen, K. M.
    Muller, D. A.
    Schlom, D. G.
    NATURE COMMUNICATIONS, 2014, 5
  • [37] Atomically precise interfaces from non-stoichiometric deposition
    Y. F. Nie
    Y. Zhu
    C.-H. Lee
    L. F. Kourkoutis
    J. A. Mundy
    J. Junquera
    Ph. Ghosez
    D. J. Baek
    S. Sung
    X. X. Xi
    K. M. Shen
    D. A. Muller
    D. G. Schlom
    Nature Communications, 5
  • [38] Origin of the generally defined absorption edge of non-stoichiometric lithium niobate crystals
    Xiaochun Li
    Yongfa, Kong
    Hongde Liu
    Lei Sun
    Jingjun Xu
    Shaolin Chen
    Ling Zhang
    Ziheng Huang
    Shiguo Liu
    Guangyin Zhang
    SOLID STATE COMMUNICATIONS, 2007, 141 (03) : 113 - 116
  • [39] Raman Scattering in Non-Stoichiometric Lithium Niobate Crystals with a Low Photorefractive Effect
    Sidorov, Nikolay
    Palatnikov, Mikhail
    Kadetova, Alexandra
    CRYSTALS, 2019, 9 (10):
  • [40] Luminescence Properties of Non-Stoichiometric Lithium Niobate Crystals of Various Composition and Genesis
    Smirnov, M. V.
    Sidorov, N. V.
    Palatnikov, M. N.
    OPTICS AND SPECTROSCOPY, 2023, 131 (08) : 743 - 756
12345