Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device Junctions

被引：3

作者：

Ghetti, Andrea ^{[1
]}

Compagnoni, Christian Monzio ^{[2
]}

Calloni, Andrea ^{[1
]}

Vendrame, Loris ^{[1
]}

Spinelli, Alessandro S. ^{[2
,3
]}

Lacaita, Andrea L. ^{[2
,3
]}

机构：

[1] Micron Technol Inc, Proc R&D, I-20864 Agrate Brianza, Italy

[2] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy

[3] CNR, Ist Foton & Nanotecnol, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 10期

关键词：

Atomistic doping; band-to-band current; gate-induced drain leakage; semiconductor device modeling; variability; INTRINSIC PARAMETER FLUCTUATIONS; SIMULATION; DECANANOMETER; MOSFETS;

D O I：

10.1109/TED.2013.2277727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion.

引用

页码：3291 / 3297

页数：7

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