Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization

被引：0
|
作者：
Smets, Q. [1 ,2 ]
Verhulst, A. S. [1 ]
Lin, D. H. -C. [1 ]
Verreck, D. [1 ,2 ]
Merckling, C. [1 ]
El Kazzi, S. [1 ]
Martens, K. [1 ]
Raskin, J-P. [3 ]
Thean, V. -Y. [1 ]
Heyns, M. M. [1 ,2 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, B-3000 Louvain, Belgium
[3] Catholic Univ Louvain, B-1348 Louvain La Neuve, Belgium
来源：
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2014年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：63 / +
页数：2
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