Ion implantation doping for AlGaN/GaN HEMTs

被引：24

作者：

Suita, Muneyoshi ^{[1
]}

Nanjo, Takuma ^{[1
]}

Oishi, Toshiyuki ^{[1
]}

Abe, Yuji ^{[1
]}

Tokuda, Yasunori ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1,Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565135

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Selective doping using ion implantation has been developed for the source/drain contacts of AlGaN/GaN high electron mobility transistors (HEMTs). As the annealing temperature of the electrical activation increased, the gate leakage current increased, although the specific contact resistance decreased. The characteristics of ion implanted HEMTs were improved using the optimized annealing temperature of 1150 degrees C. A saturation drain current of 0.68 A/mm and a maximum transconductance of 0.17 S/mm were obtained without degrading the off-state breakdown voltage. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2364 / 2367

页数：4

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