Gas source molecular-beam epitaxy growth of GaN/GaP superlattices and GaN layers on GaP(111)A substrates

被引：1

作者：

Ohnishi, K ^{[1
]}

Tampo, H ^{[1
]}

Imanishi, Y ^{[1
]}

Yamada, K ^{[1
]}

Asami, K ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki 5670047, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 02期

基金：

日本学术振兴会;

关键词：

molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)01524-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN/GaP short-period superlattices were grown on GaP(111)A substrates by gas source molecular-beam epitaxy. Despite the large lattice-mismatch between GaN and GaP, reflection high-energy electron diffraction patterns showed the quick switch from GaN (GaP) streaks to GaP (GaN) streaks just after the corresponding switch of the growth. This indicates two-dimensional layer-by-layer growth resulting from the relaxation of lattice strain at the initial stage of the hetero-epitaxy. This phenomenon is considered to be due to the use of (111)A-oriented substrates. Bulk GaN layers were also grown on GaP(111)A substrates and the flat-surface GaN layers were obtained because of the two-dimensional layer-by-layer growth starting from the interface between GaN and GaP (111)A substrates. Strong near-band-edge photoluminescence with very weak deep-level emission was observed. GaP(111)A substrate is considered to be promising for the growth of GaN. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：283 / 287

页数：5

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