Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

被引：14

作者：

Kato, H ^{[1
]}

Seol, KS

Fujimaki, M

Toyoda, T

Ohki, Y

Takiyama, M

机构：

[1] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[3] NSC Elect Corp, Yamaguchi 7430063, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12A期

关键词：

tantalum pentaoxide (Ta2O5); ozone annealing; charge trapping property; hysteresis loop; thermally stimulated current;

D O I：

10.1143/JJAP.38.6791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N4/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.

引用

页码：6791 / 6796

页数：6

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