Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

被引：14
|
作者：
Kato, H [1 ]
Seol, KS
Fujimaki, M
Toyoda, T
Ohki, Y
Takiyama, M
机构：
[1] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] NSC Elect Corp, Yamaguchi 7430063, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12A期
关键词：
tantalum pentaoxide (Ta2O5); ozone annealing; charge trapping property; hysteresis loop; thermally stimulated current;
D O I：
10.1143/JJAP.38.6791
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N4/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.
引用
收藏
页码：6791 / 6796
页数：6
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