Improved quantum efficiency in nonpolar (11(2)over-bar0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

被引：53

作者：

Koida, T

Chichibu, SF

Sota, T

Craven, MD

Haskell, BA

Speck, JS

DenBaars, SP

Nakamura, S

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] Japan Sci & Technol Agcy, ERATO, NICP, Saitama 3320012, Japan

[4] Waseda Univ, Dept Elect Engn & Biosci, Shinjuku Ku, Tokyo 1698555, Japan

[5] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1738185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiative and nonradiative excitonic transitions in nonpolar (11 (2) over bar0) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on the GaN template prepared by lateral epitaxial overgrowth (LEO-GaN) were investigated. The structural advantages of using nonpolar orientations were confirmed by a moderate shift of the photoluminescence (PL) peak energy and negligible change in low-temperature PL lifetime with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the polarization fields that exist in polar (0001) MQWs. Appearance of the correct in-plane light polarization and improved internal quantum efficiency for the PL peak in the MQWs on LEO-GaN were attributed to the reduction in densities of nonradiative defects and bound states. (C) 2004 American Institute of Physics.

引用

页码：3768 / 3770

页数：3

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