Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0)

被引：7
|
作者：
Pristovsek, Markus [1 ]
Han, Yisong [1 ,4 ]
Zhu, Tongtong [1 ]
Oehler, Fabrice [1 ,5 ]
Tang, Fengzai [1 ]
Oliver, Rachel A. [1 ]
Humphreys, Colin J. [1 ]
Tytko, Darius [2 ]
Choi, Pyuck-Pa [2 ]
Raabe, Dierk [2 ]
Brunner, Frank [3 ]
Weyers, Markus [3 ]
机构：
[1] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
[2] Max Planck Inst Eisenforsch GmbH, Dept Microstruct Phys & Alloy Design, Max Planck Str 1, D-40237 Dusseldorf, Germany
[3] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[4] Univ Ulster, Nanotechnol & Integrated Bioengn Ctr, Newtownabbey BT37 0QB, North Ireland
[5] CNRS, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 08期
基金：
欧盟第七框架计划; 英国工程与自然科学研究理事会;
关键词：
InGaN; semi-polar; quantum well; atom probe tomography; step-bunching; optical properties; LIGHT-EMITTING-DIODES; GROWTH MODE; SAPPHIRE; PLANE; TEMPLATES; RELAXATION; EFFICIENCY; EMISSION; NONPOLAR; SURFACE;
D O I：
10.1088/0268-1242/31/8/085007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We benchmarked growth, microstructure and photo luminescence (PL) of (11 (2) over bar2) InGaN quantum wells (QWs) against (0001) and (11 (2) over bar0). In incorporation, growth rate and the critical thickness of (11 (2) over bar2) QWs are slightly lower than (0001) QWs, while the In incorporation on (11 (2) over bar0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20% In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (11 (2) over bar0). The slight deviation of (11 (2) over bar2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (11 (2) over bar2) and (0001) while (11 (2) over bar0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 x lower on (11 (2) over bar2) and more than 10 x lower on (11 (2) over bar0).
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页数：8
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