Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies

被引：10
|
作者：
Tomlinson, AM [1 ]
Chang, CC
Stone, RJ
Nicholas, RJ
Fox, AM
Pate, MA
Foxon, CT
机构：
[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, EPSRC Cent Facil Semicond 3 5, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[4] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期
关键词：
D O I：
10.1063/1.126101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a detection mechanism for 2-5 THz radiation using intersubband transitions between anticrossing electron levels in a GaAs/AlGaAs coupled-quantum-well photodiode. The THz radiation is detected as a modulation in the photocurrent generated by a visible laser. This modulation is caused by carrier heating effects due to absorption of energy by intersubband transitions. Since the frequency of the intersubband transitions varies with the electric-field strength, the device can function as a voltage-tunable THz detector. (C) 2000 American Institute of Physics. [S0003-6951(00)02012-X].
引用
收藏
页码：1579 / 1581
页数：3
相关论文
共 50 条
  • [41] Intersubband transitions in coupled triple-graded quantum wells under an electric field
    Kasapoglu, E
    Sari, H
    Sokmen, I
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (12): : 2468 - 2473
  • [42] Intersubband absorption modulation in the GaAs/AlGaAs double tunnel-coupled quantum wells
    Rybalko, D. A.
    Vinnichenko, M. Ya
    Vorobjev, L. E.
    Firsov, D. A.
    Balagula, R. M.
    Kulagina, M. M.
    Vasil'iev, A. P.
    16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2015, 586
  • [43] Intersubband absorption dynamics in coupled quantum wells
    Müller, T
    Bratschitsch, R
    Strasser, G
    Unterrainer, K
    APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2755 - 2757
  • [44] Tunable intersubband transitions in ZnO/ZnMgO multiple quantum wells in the mid infrared spectral range
    Orphal, Laura
    Kalusniak, Sascha
    Benson, Oliver
    Sadofev, Sergey
    AIP ADVANCES, 2017, 7 (11):
  • [45] EVALUATION OF THE FEASIBILITY OF A FAR-INFRARED LASER BASED ON INTERSUBBAND TRANSITIONS IN GAAS QUANTUM WELLS
    BORENSTAIN, SI
    KATZ, J
    APPLIED PHYSICS LETTERS, 1989, 55 (07) : 654 - 656
  • [46] SHORT-WAVELENGTH INTERSUBBAND TRANSITIONS IN INGAAS/ALGAAS QUANTUM-WELLS GROWN ON GAAS
    CHUI, HC
    MARTINET, EL
    FEJER, MM
    HARRIS, JS
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 736 - 738
  • [47] He+-ion irradiation effect on intersubband transitions in GaAs/AlGaAs multiple quantum wells
    Berhane, Y
    Manasreh, MO
    Weaver, BD
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) : 3517 - 3519
  • [48] THz-driven nonlinear intersubband dynamics in quantum wells
    Dietze, D.
    Darmo, J.
    Unterrainer, K.
    OPTICS EXPRESS, 2012, 20 (21): : 23053 - 23060
  • [49] Degradation of intersubband transitions in electron irradiated GaAs/AlGaAs multiple quantum wells with superlattice barriers
    Morath, CP
    Manasreh, MO
    Gingrich, HS
    von Bardeleben, HJ
    Ballet, P
    Smathers, JB
    Salamo, GJ
    INFRARED APPLICATIONS OF SEMICONDUCTORS III, 2000, 607 : 503 - 508
  • [50] Intersubband relaxation of hot excitons in GaAs quantum wells
    Segawa, Y.
    Yasui, T.
    Limura, Y.
    Rodrigues, R.
    Hopfel, R.A.
    Aoyagi, Y.
    Goodnick, S.M.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 733 - 735
12345